|
ЧИП резистор 2512 150ом 5% CR-12JL4--150R
|
|
382
|
1,91
|
26.04.2024 12:23:42
|
|
|
|
DP2525 SO7-150 Developer Microelectronics
|
|
88
|
9,45
|
26.04.2024 12:23:42
|
|
|
|
MX25L8005M2C-15G SO8-208 Macronix
|
|
25
|
13,27
|
26.04.2024 12:23:42
|
|
|
|
25LC640AT-I/SN SO8-150 Microchip
|
|
7
|
16,49
|
26.04.2024 12:23:42
|
|
|
|
25LC640-I/SN SO8-150 Microchip
|
|
17
|
42,53
|
26.04.2024 12:23:42
|
|
|
|
MCP2515-I/P DIP18 Microchip
|
|
5
|
42,43
|
26.04.2024 12:23:42
|
|
|
|
MCP2515-I/SO SO18-300 Microchip
|
|
19
|
45,25
|
26.04.2024 12:23:42
|
|
|
|
ЧИП резистор 2512 1,5ком 5% CR12-12JL4-1K5 Viking
|
|
255
|
1,91
|
26.04.2024 12:23:42
|
|
|
|
ЧИП резистор 2512 1,5мом 5% CR12-12JL4-1M5 Viking
|
|
299
|
1,91
|
26.04.2024 12:23:42
|
|
|
|
резистор SMD R0402-5,1 Ом-5% (2015г.) (CR0402-J/-5R1GLF)
|
(Bourns)
|
30000
|
0,03
|
27.03.2024 14:27:48
|
|
|
|
2512 0 ОМ 5% (CR2512J150RE04)
|
б/г EVER 4000
|
3745
|
0,08
|
12.01.2024 12:12:29
|
|
|
|
BCR158WH6327XTSA1 PNP 50V 100MA 250MW BUILT IN BIAS RESISTOR RB=2.2K, RBE=47K
|
2019г Infineon SOT-323 3000
|
106014
|
0,42
|
12.01.2024 12:12:29
|
|
|
|
ECAP 1500/16V 12.516 RD 105C (RD1C158M12016BB)
|
Samwha
|
208
|
1,31
|
12.01.2024 12:12:29
|
|
|
|
ECAP 1500/25V 1320 RD 105C (RD1E158M13020BB)
|
Samwha
|
273
|
1,91
|
12.01.2024 12:12:29
|
|
|
|
ECAP 1500/50V 1625 RD 105C (RD1H158M16025BB)
|
Samwha
|
213
|
3,02
|
12.01.2024 12:12:29
|
|
|
|
ECAP 220/25V 0811.5 RD 105C (RD1E227M0811MBB)
|
Samwha
|
600
|
0,66
|
12.01.2024 12:12:29
|
|
|
|
ECAP 330/25V 0811.5 RD 105C (RD1E337M0811MBB)
|
Samwha
|
150
|
0,60
|
12.01.2024 12:12:29
|
|
|
|
ECAP 220/25v 0811.5 RD 105C (RD1E227M0811MBB)
|
Samwha
|
600
|
0,45
|
04.10.2023 12:31:31
|
|
|
|
ECAP 330/25v 0811.5 RD 105C (RD1E337M0811MBB)
|
Samwha
|
150
|
0,40
|
04.10.2023 12:31:31
|
|
|
|
ECAP 1500/25v 1320 RD 105C (RD1E158M13020BB)
|
Samwha
|
273
|
1,51
|
04.10.2023 12:31:31
|
|
|
